发明名称 Semiconductor memory device having a current consumption reduction in a data write path
摘要 The present invention describes a semiconductor memory device that can reduce current consumption occurring in a data write path. The semiconductor memory device includes a write path over which any one of general data and representative data corresponding to a particular mode is transferred in correspondence with a prescribed pad. A routing controller allows the representative data to be routed over a transfer path corresponding to any other pads in the particular mode and prevents the general data from being routed over the transfer path in modes other than the particular mode. The semiconductor memory device can reduce current consumption caused by unnecessary toggling of the data through utilization of the routing controller.
申请公布号 US7948807(B2) 申请公布日期 2011.05.24
申请号 US20070964136 申请日期 2007.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK KI CHON
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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