METHOD OF FORMING OHMIC CONTACT ELECTRODE USING DIELECTRIC THIN FILM FOR IMPROVING MORPHOLOGY OF OHMIC CONTACT ELECTRODE AND RESISTANCE

摘要

PURPOSE: A method for forming an ohmic contact electrode using a dielectric thin film is provided to improve the morphology of an ohmic contact electrode surface by forming the dielectric thin film on an ohmic contact electrode. CONSTITUTION: An ohmic contact electrode(230) is formed on a semiconductor layer(220). A dielectric thin film(240) is formed on the ohmic contact electrode to prevent the morphology of the ohmic contact electrode surface from being curved in a thermal process. A contact resistance between a semiconductor layer and an ohmic contact electrode is improved by thermally processing a stack structure. A semiconductor layer, an ohmic contact electrode and a dielectric thin film are stacked on the stack structure. The dielectric thin film is removed.