发明名称 |
Implant damage control by in-situ C doping during SiGe epitaxy for device applications |
摘要 |
Some example embodiments of the invention comprise methods for and semiconductor structures comprised of: a MOS transistor comprised of source/drain regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subsequent heat processing. |
申请公布号 |
US7947546(B2) |
申请公布日期 |
2011.05.24 |
申请号 |
US20060502132 |
申请日期 |
2006.08.09 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION (IBM) |
发明人 |
LIU JIN PING;HOLT JUDSON ROBERT |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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