| 摘要 |
The present invention provides a load capacity driving circuit that is inexpensive and has a high driving capability. When an input signal changes to low potential, gate voltage of an output stage of an amplifying circuit increases, an NMOS transistor MNO turns on, and an NMOS transistor MN8 increases potential of a node NGAT. Due thereto, an NMOS transistor MNO2 also turns on, and a load capacity is discharged via the NMOS transistor MNO and the NMOS transistor MNO2. Further, when the input signal changes to high potential, gate voltage of the output stage of the amplifying circuit decreases, a PMOS transistor MPO turns on, and a PMOS transistor MP8 decreases potential of a node PGAT. Due thereto, a PMOS transistor MPO2 also turns on, and the load capacity is charged from a constant voltage source via the PMOS transistor MPO and the PMOS transistor MPO2.
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