发明名称 Multilayer image sensor structure for reducing crosstalk
摘要 An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
申请公布号 US7948018(B2) 申请公布日期 2011.05.24
申请号 US20080109134 申请日期 2008.04.24
申请人 OMNIVISION TECHNOLOGIES, INC. 发明人 VENEZIA VINCENT;NOZAKI HIDETOSHI;MAO DULI;QIAN YIN;TAI HSIN-CHIH;RHODES HOWARD E.
分类号 H01L31/062 主分类号 H01L31/062
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