发明名称 |
Multilayer image sensor structure for reducing crosstalk |
摘要 |
An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
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申请公布号 |
US7948018(B2) |
申请公布日期 |
2011.05.24 |
申请号 |
US20080109134 |
申请日期 |
2008.04.24 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
VENEZIA VINCENT;NOZAKI HIDETOSHI;MAO DULI;QIAN YIN;TAI HSIN-CHIH;RHODES HOWARD E. |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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