| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a void at a space between metal lines by reducing an aspect ratio of the space between metal lines. CONSTITUTION: A contact plug(22) is formed on a substrate with a semiconductor device and a photoresist layer is formed. A photoresist pattern open around the contact plug is formed by patterning the photoresist layer. A trench is formed by lightly etching the part around the contact plug using the photoresist pattern as an etching mask. An insulation layer is deposited after a metal wiring(24) process on the substrate with a trench.
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