发明名称 |
Thick metal interconnect with metal pad caps at selective sites and process for making the same |
摘要 |
The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.
|
申请公布号 |
US7947592(B2) |
申请公布日期 |
2011.05.24 |
申请号 |
US20080012120 |
申请日期 |
2008.01.31 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
DALAL HORMAZDYAR MINOCHER;PRASAD JAGDISH;ZIAD HOCINE BOUZID |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|