发明名称 |
Semiconductor device having trench edge termination structure |
摘要 |
In one embodiment, a device is formed in a region of semiconductor material. The device includes active cell trenches and termination trenches each having doped sidewall surfaces that compensate the region of semiconductor material during reverse bias conditions to form a superjunction structure. The termination trenches include a trench fill material that enhances depletion region spread during reverse bias conditions.
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申请公布号 |
US7948033(B2) |
申请公布日期 |
2011.05.24 |
申请号 |
US20070671514 |
申请日期 |
2007.02.06 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
HOSSAIN ZIA |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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