发明名称 Double plasma ion source
摘要 An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.
申请公布号 US7947966(B2) 申请公布日期 2011.05.24
申请号 US20080183961 申请日期 2008.07.31
申请人 AXCELIS TECHNOLOGIES, INC. 发明人 DIVERGILIO WILLIAM F.
分类号 H01J27/02 主分类号 H01J27/02
代理机构 代理人
主权项
地址