LASER MASK AND SEQUENTIAL LATERAL SOLIDIFICATION CRYSTALLIZING METHOD USING THE SAME

摘要

PURPOSE: A laser mask and a sequential lateral solidification crystallizing method using the same are provided to suppress crystal defects by uniformly irradiating laser beams to an amorphous silicon layer through an uneven part of the laser mask. CONSTITUTION: A mask substrate comprises a light blocking unit and a base substrate(100). The light blocking units(LI) are separated from each other by interposing a light transmitting unit(LT). The base substrate includes a first surface(110) and a second surface(120) which faces the first surface. An uneven part(200) is located on the mask substrate by corresponding to the light blocking unit. The light blocking unit is located on the first or second surface of the base substrate. The uneven part includes a first sub uneven part(210) and a second sub uneven part(220).