| 摘要 |
A semiconductor memory device having a plurality of cell blocks includes: a block decoding unit configured to decode an input address for selecting a corresponding cell block to generate a block selection signal; a block information address generating unit configured to perform a logic operation on the block selection signal and an assignment address for selecting a word line to be activated within the corresponding cell block to generate a block information address activated only when the corresponding cell block is selected; and a word line driving unit configured to select a word line in response to the block information address.
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