发明名称 FET bias circuit
摘要 A FET bias circuit applies a bias voltage that is not adjusted separately to an amplifying element FET of a FET amplifying circuit. In the FET bias circuit is provided a monitor element FET m having a gate connected to the gate of the amplifying element FET a and a source connected to the source of the amplifying element FET a, respectively, and having a drain current with respect to the bias voltage substantially proportional to the drain current of the amplifying element FET a. In the FET bias circuit is further provided a fixed bias circuit for applying the bias voltage so that the amplifying element FET a enters a predetermined operating class by applying a bias voltage to the monitor element FET m so that a drain current flowing to the monitor element FET m enters a predetermined operating class.
申请公布号 US7948321(B2) 申请公布日期 2011.05.24
申请号 US20100684251 申请日期 2010.01.08
申请人 JAPAN RADIO CO., LTD. 发明人 HONDA TAMAKI;SAKAMOTO HIRONORI;OKADOME KENJIRO
分类号 H03F3/04 主分类号 H03F3/04
代理机构 代理人
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