发明名称 |
Drive circuit for semiconductor element |
摘要 |
A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate “ON” command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an “ON” signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off.
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申请公布号 |
US7948277(B2) |
申请公布日期 |
2011.05.24 |
申请号 |
US20070294437 |
申请日期 |
2007.04.04 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKATAKE HIROSHI;ISHIBASHI SATOSHI;IDENOUE SHINSUKE;OI TAKESHI;KINOUCHI SHINICHI;HORIGUCHI TAKESHI |
分类号 |
H03K3/00 |
主分类号 |
H03K3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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