发明名称 |
Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing |
摘要 |
A nonvolatile semiconductor memory device transmits/receives data to/from a data input/output terminal every j bits (e.g., eight bits). Each of memory cells in a memory cell array can hold data of n bits in correspondence to 2n threshold levels. A write data conversion circuit generates write data from bit data input from the same data input/output terminal in a set of a plurality of data of j bits input at different timings.
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申请公布号 |
US7949823(B2) |
申请公布日期 |
2011.05.24 |
申请号 |
US20100697852 |
申请日期 |
2010.02.01 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
KUNORI YUICHI |
分类号 |
G06F12/00;G11C16/02;G11C11/56 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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