| 摘要 |
PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to reduce the optical property loss of a light emitting device by preventing damages or crack on a substrate due to stress. CONSTITUTION: A light emitting laminate is formed by laminating an n type nitride semiconductor layer(120), an active layer(130), and a p type nitride semiconductor layer(140) on a growing substrate(110). A support substrate is formed on the p type nitride semiconductor layer. A separation sub layer is formed on the support substrate. A growing substrate is removed. The separation sub layer is removed.
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