| 摘要 |
PURPOSE: An immersion lithography composition and an immersion lithography method are provided to suppress the movement of photoresist materials of a resist layer to immersed solutions by moving materials immiscible with resist resin to the upper side of a photoresist coating layer coated with photoresist composition. CONSTITUTION: Photoresist composition useful for immersion lithography is provided. The photoresist composition includes materials immiscible with resist resin. The photoresist composition includes Si substitution, fluorine substitution, hyperbranched polymer, and/or polymer particles. The photoresist composition includes resin, photoactive component, and particle materials immiscible with resin. The photoresist composition is coated on the surface. A photoresist layer is exposed by an irradiation ray which activates the photoresist composition. |
