Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleitermaterial bestehender, dotierter Aufwachsschichten auf kristallinen Grundkörpern aus Halbleitermaterial,申请号AT19640011052-传众专利搜索

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发明名称	Verfahren zur Herstellung kristalliner, insbesondere einkristalliner, aus Halbleitermaterial bestehender, dotierter Aufwachsschichten auf kristallinen Grundkörpern aus Halbleitermaterial
摘要
申请公布号	AT247919(B)	申请公布日期	1966.07.11
申请号	AT19640011052	申请日期	1964.12.30
申请人	SIEMENS & HALSKE AKTIENGESELLSCHAFT	发明人
分类号	H01L	主分类号	H01L
代理机构		代理人
主权项
地址

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