发明名称 THIN-FILM MULTI-LAYER STRUCTURE, COMPONENT INCLUDING SUCH STRUCTURE AND PROCEDURE FOR ITS SEDIMENTATION
摘要 FIELD: metallurgy. ^ SUBSTANCE: corrosion resistant structure includes from 1 to 1000 groups. Also, one group includes from 2 to 100 layers (A, B) on base of carbon, silicon and hydrogen and, not necessarily, a functional surface layer (FSL). The component contains such thin-film multi-layer structure. The procedure consists in creation of primary and then secondary vacuum in a chamber. A base is etched in an active zone. A binding layer is formed by introduction of preliminary treated gas into the active zone of the chamber, by continuous base heating and by maintaining controlled temperature. Chemically active gas introduced into the active zone forms the multi-layer structure. Chemically active gas contains a single compound with a tetrahedral silicon structure or silicon-containing mixture. ^ EFFECT: high frictional and adhesion properties, high mechanical durability of coating and high heat resistance. ^ 20 cl, 2 dwg, 4 tbl
申请公布号 RU2418883(C2) 申请公布日期 2011.05.20
申请号 RU20080135371 申请日期 2007.01.30
申请人 JUROPIAN AEHRONOTIK DEFENS EHND SPEJS KOMPANI EHADS FRANS 发明人 LJUKA VALERI;ZHUANE MIKAEHL';TEJSSAND'E FRANSIS;TOMA LORAN
分类号 C23C16/32;C23C16/517 主分类号 C23C16/32
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