THIN-FILM SEMICONDUCTOR DEVICE WITH PROTECTION DIODE STRUCTURE AND METHOD FOR PRODUCING A THIN-FILM SEMICONDUCTOR DEVICE

摘要

A thin-film semiconductor device (1) is provided, having a support (5) and a semiconductor body (2) with a series of semiconductor layers, which comprise an active region (20) intended for generating radiation. External electrical contact can be established on the semiconductor body (2) by means of a first contact (31) and a second contact (32). The support (5) has a protection diode structure (7), which is electrically connected in parallel with the semiconductor body (2). The protection diode structure (7) has a first diode (71) and a second diode (72). The first diode (71) and the second diode (72) are electrically connected in series opposite to each other with respect to their forward direction. Furthermore, a method for producing a thin-film semiconductor device is provided.