SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS

摘要

A method of etching silicon-and-carbon-containing material is described and includes a SiConiTM etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConiTM etch reducing the carbon content in the near surface region and allowing the SiConiTM etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConiTM etch further improving the effective etch rate.