| 摘要 |
<p>Disclosed is a solid-state image pickup device which is provided with a plurality of pixels (11), which are arranged in matrix on a semiconductor substrate (31). The photoelectric conversion section (111) in each of the pixels (11) has a photoelectric conversion film (45), which is sandwiched between a pixel electrode (46) and a transparent electrode (47). An amplifying transistor (113) has the gate thereof connected to the pixel electrode (46), and a reset transistor (117) has the source thereof connected to the pixel electrode (46). The solid-state image pickup device performs: a hardware resetting operation, wherein, after applying a first reset voltage to the drain of the reset transistor (117), the reset transistor (117) is brought into the on-state; and a software resetting operation, wherein, after applying a second reset voltage at a level higher than the level of the first reset voltage to the drain of the reset transistor (117), a pulse in the negative direction is applied to the source of the reset transistor (117) via a capacitor.</p> |
