| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC semiconductor device for achieving highly accurate alignment between the SiC semiconductor substrate and a mask without increase and complication of manufacturing steps. <P>SOLUTION: The method of manufacturing an SiC semiconductor device includes: a trench forming step to form, in an alignment mark forming region R1, a trench 12 that is used as an alignment mark and is shaped in polygon wherein the shape of an aperture is symmetry for the off-direction and a vertex is located at the part in the lowest stream side of the off-direction; a step to execute at least one of an epitaxial layer growing step to allow growth of an epitaxial layer 13, and a heat treatment step to execute heat treatment to the SiC semiconductor substrate 10 after the trench forming step; and a step to arrange a mask on the SiC semiconductor substrate 10 through mask alignment with reference to the alignment mark after conducting at least one of the epitaxial layer growing step and the heat treatment step. <P>COPYRIGHT: (C)2011,JPO&INPIT |
