UTILIZATION OF ORGANIC BUFFER LAYER TO FABRICATE HIGH PERFORMANCE CARBON NANOELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To utilize an organic buffer layer to fabricate a high performance carbon nanoelectronic device. SOLUTION: A fabrication process for the nanoelectronic device and the device are provided. A channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on a polymer layer. A top gate metal is deposited on the top gate oxide. COPYRIGHT: (C)2011,JPO&INPIT