| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high avalanche resistance at an end part liable to cause an electric field concentration, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device includes an N-type drift layer 12 on an N-type drain layer 11, a P-type base layer 13 on the N-type drift layer 12, an N-type source region 14 provided on a surface of the P-type base layer 13, a drain electrode 15, a source electrode 16, a trench gate 2 provided in a cell region 8, in which a main current longitudinally flows, between the drain electrode 15 and source electrode 16, and partitioning off a plurality of unit cells 3, a first contact region 21 including a P-type impurity of a bottom of a first contact hole 4 formed in a center part of each of the plurality of unit cells 3, and a second contact region 22 including a P-type impurity of a bottom of each of a plurality of second contact holes 5 formed in a peripheral end region, the second contact holes 5 being equal in opening area to or smaller than the first contact holes 4. COPYRIGHT: (C)2011,JPO&INPIT |
