| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which an erase operation of a plurality of blocks can be easily interrupted, and to provide a method for controlling the semiconductor device. <P>SOLUTION: The semiconductor device includes: a NAND flash memory 2 including a plurality of blocks BLK and a decoder 11 which selects the blocks BLK, wherein data can be erased collectively from the plurality of blocks BLK, and the decoder 11 holds defective block information at least when data is read and written, and holds information about blocks to be erased when the plurality of blocks BLK are erased collectively; an SRAM 30 which can hold information about the blocks BLK to be erased; and a controller 4 which reads the information about the blocks BLK to be erased from the SRAM 30 and sets the information into the decoder 11 during the collective erase operation. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
