SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device that a group-III nitride substrate whose main surface is a nonpolarity surface and that includes an active layer with an In, wherein a resonance structure with less optical loss is achieved. SOLUTION: The semiconductor laser device 1A includes: a group-III nitride substrate 11 whose main surface 11a is the nonpolarity surface; an active layer 27 with the In that is provided on the group-III nitride substrate 11; and a diffraction grating layer 17 that is provided along the active layer 27 and includes a periodic structure where a refractive index periodically varies in one- or two-dimension. COPYRIGHT: (C)2011,JPO&INPIT