发明名称 |
GROUP III-NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Methods of forming Group III-nitride transistor device include forming a protective layer on a Group III-nitride semiconductor layer, forming a via hole through the protective layer to expose a portion of the Group III-nitride semiconductor layer, and forming a masking gate on the protective layer. The masking gate includes an upper portion having a width that is larger than a width of the via hole and having a lower portion extending into the via hole. The methods further include implanting source/drain regions in the Group III-nitride semiconductor layer using the masking gate as an implant mask. |
申请公布号 |
WO2011016940(A3) |
申请公布日期 |
2011.05.19 |
申请号 |
WO2010US41202 |
申请日期 |
2010.07.07 |
申请人 |
CREE, INC.;SMITH, R. PETER;SHEPPARD, SCOTT T. |
发明人 |
SMITH, R. PETER;SHEPPARD, SCOTT T. |
分类号 |
H01L21/335;H01L21/266;H01L21/285;H01L21/338;H01L29/15;H01L29/20;H01L29/423;H01L29/778;H01L29/812 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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