THIN FILM TRANSISTOR AND DISPLAY DEVICE

摘要

Disclosed is a thin film transistor wherein an on-current is increased and a leak current is reduced. The channel layer (60) of the TFT (10) is formed of a crystalline silicon, and the lower surface of one end of the channel layer (60) is electrically connected to the surface of an n+ silicon layer (40a), and the lower surface of the other end is electrically connected to the surface of an n+ silicon layer (40b). Furthermore, the side surface of said end of the channel layer (60) is electrically connected to a source electrode (50a), and the side surface of the other end is electrically connected to a drain electrode (50b). Thus, a barrier that makes electrons, which are to be carriers, not easily transferred is formed on the boundary between the source electrode (50a) and the channel layer (60). As a result, not only the on-current that flows when the TFT (10) is in the on-state can be increased but also a leak current that flows when the TFT is in the off-state can be reduced.