| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel field effect transistor whose subthreshold swing is improved, and whose supply voltage is further reduced. SOLUTION: This tunnel field effect transistor has: a highly doped drain region 3; a lowly doped channel region 2; a highly doped source region 1; and a gate dielectric 10 and a gate electrode 9 covering at least part of the lowly doped channel region 2 in contact with the highly doped source region 1, wherein the film thickness of the gate dielectric 10 on a source-channel interface 12 is smaller than the film thickness of the gate dielectric 10 on a channel 2 isolated from the source-channel interface 12 by a prescribed distance. COPYRIGHT: (C)2011,JPO&INPIT |
