| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory element that utilizes a state change such as softening or melting, differently from a conventional memory element, and to provide a memory device having an increased memory capacity. <P>SOLUTION: This memory element is formed by laminating a plurality of memory material layers having different glass transition temperatures between a pair of electrodes. It is preferable that the glass transition temperatures have difference≥10°C. By applying voltage to such a memory element, the plurality of memory material layers are softened or melted one by one. By such a structure, the memory capacity becomes three or more values and is increased. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
