| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern thickening material which efficiently thickens a resist pattern, while suppressing sublimation of low-molecular compounds, and which enables a fine resist pattern to be produced, with the fine resist pattern exceeding the exposure limit in a light source of an existing exposure device, to provide a semiconductor device manufactured that uses the resist pattern thickening material, and to provide a method for manufacturing the device. SOLUTION: The resist pattern thickening material contains resin, a compound selected among a cyclic compound represented by general formula (1), a compound having a carboxyl group-containing cyclic structure, and a compound containing an aromatic hydrocarbon structure and water. COPYRIGHT: (C)2011,JPO&INPIT |
