MEMORY DEVICE AND METHOD FOR SENSING A CONTENT OF A MEMORY CELL

摘要

A memory device and a method for sensing a content of a memory cell. The memory device includes : (i) a pair of bit-lines; (ii) a memory cell coupled between the pair of bit-lines; (iii) a sensing circuit having at least two inputs for receiving respective currents from a current conveyor, said sensing circuit being arranged to sense, when operating in a sensing mode, a difference between said output currents, said difference between the output currents representing a content of the memory cell; and said sensing circuit comprising an output for outputting an output signal that represents the content of the memory cell; and (iv) a current conveyor, coupled to the pair of bit- lines and to the sensing circuit, for: isolating the sensing circuit from the bit-lines, when the current conveyor operated in an isolation mode; said current conveyor having at least two outputs for providing, to the sensing circuit when the sensing circuit operated in the sensing mode, output currents representing bit-lines currents; and equalizing the output currents before the current conveyor starts to operate in a current conveying mode. The sensing circuit enters the sensing mode after the current conveyor exits the current conveying mode.