| 摘要 |
<p>Disclosed is a semiconductor device which comprises a substrate and a plurality of thin film diodes that are supported by the substrate and electrically connected in parallel with each other. The plurality of thin film diodes include: at least one first-type thin film diode (100A) which comprises a semiconductor layer (10A) that has an N-type region (1A), an intrinsic region (5A) and a P-type region (3A) in this order in a first direction X along a plane that is parallel to the substrate; and at least one second-type thin film diode (100B) which comprises a semiconductor layer (10B) that has a P-type region (3B), an intrinsic region (5B) and an N-type region (1B) in this order in the first direction X. Consequently, variations in the photocurrent characteristics of the thin film diodes can be reduced.</p> |
