| 摘要 |
PROBLEM TO BE SOLVED: To obtain high-pressure resistance by suppressing breakdown at a deep layer, in an SiC semiconductor device arranged with the deep layer so that the semiconductor device intersects with a trench gate structure. SOLUTION: In an entire area of an outer edge of a cell region including an outer peripheral region, p-type deep layers 10 are formed, and a p-type resurf layer 15 which is formed in a boundary position between the cell region of a mesa structure 14 and its periphery has the same depth as the p-type deep layer 10. This causes an equipotential-line distribution to be nearly horizontal to a substrate plane at a junction between the p-type deep layer 10 and the p-type resurf layer 15, thus enabling an electric field to match a direction substantially vertical to the substrate plane, or the azimuth direction of a [0001] plane. As a result, when a drain voltage becomes high, the electric field is concentrated on a guard ring rather than a lower portion of the junction between the p-type deep layer 10 and the p-type resurf layer 15. Therefore, it becomes possible to suppress breakdown at the p-type deep layer 10 and obtain the high-pressure resistance. COPYRIGHT: (C)2011,JPO&INPIT |
