| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an insulating film which can be properly embedded in a trench formed at a substrate with a high aspect ratio and a narrow opening width and low in leak current. SOLUTION: The following processes are performed in sequence: an application process for applying a condensation reactant between a polysiloxane compound and silica particles to a substrate including a trench structure as a first process, a burning process for burning the applied condensation reactant and forming the insulating film as a second process, and a hydrophobic treatment process for subjecting the surface of the insulating film to a hydrophobic treatment agent as a third process. COPYRIGHT: (C)2011,JPO&INPIT |
