| 摘要 |
According to one embodiment, a memory system includes a memory and a controller. The memory includes NAND strings. Each of the NAND strings includes memory cells. The memory cells capable of holding data. The memory writing and reading data in units of a page corresponding to a set of the memory cells and erasing data in units of a block corresponding to a set of the NAND strings. The controller controls the memory. The controller includes a holding unit and a control unit. The holding unit holds a table in which information on a check page is recorded, for each zone corresponding to a set of the blocks. The control unit references the table to calculate a read error and instructs the memory to write the data in the block including the check page to another block in the memory, if the occurrence rate exceeds a preset threshold.
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