发明名称 |
SELECTIVE USE OF PROGRAMMING INHIBIT SCHEME FOR NONVOLATILE MEMORY |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To program a non-volatile memory system so as to reduce or prevent program disturbance. <P>SOLUTION: A plurality of program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes minimize or eliminate program disturbance at select word lines in a preferred manner. The temperature of a memory system is detected before or during a programming operation. A program inhibit scheme can be selected based on the temperature of the system. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011100540(A) |
申请公布日期 |
2011.05.19 |
申请号 |
JP20100284516 |
申请日期 |
2010.12.21 |
申请人 |
SANDISK CORP |
发明人 |
WAN JUN;LUTZE JEFFREY;HIGASHIYA MASAAKI;HEMINK GERRIT JAN;OWADA KEN;CHEN JIAN;GONGWER GEOFFREY S |
分类号 |
G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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