发明名称 SELECTIVE USE OF PROGRAMMING INHIBIT SCHEME FOR NONVOLATILE MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To program a non-volatile memory system so as to reduce or prevent program disturbance. <P>SOLUTION: A plurality of program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes minimize or eliminate program disturbance at select word lines in a preferred manner. The temperature of a memory system is detected before or during a programming operation. A program inhibit scheme can be selected based on the temperature of the system. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011100540(A) 申请公布日期 2011.05.19
申请号 JP20100284516 申请日期 2010.12.21
申请人 SANDISK CORP 发明人 WAN JUN;LUTZE JEFFREY;HIGASHIYA MASAAKI;HEMINK GERRIT JAN;OWADA KEN;CHEN JIAN;GONGWER GEOFFREY S
分类号 G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
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