| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern having a large depth of focus (DOF), small line width roughness (LWR) and reduced bridge defects, in order to more stably form a high-accuracy fine pattern for manufacturing a highly integrated and accurate electronic device, and to provide a chemical amplification resist composition used in the method and a resist film formed from the chemical amplification resist composition. <P>SOLUTION: The pattern forming method includes: (1) a step of forming a film from a chemical amplification resist composition; (2) a step of exposing the film; and (3) a step of developing the film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a cross-linking agent; and (D) a solvent. The chemical amplification resist composition used in the method and the resist film formed from the chemical amplification resist composition are also provided. <P>COPYRIGHT: (C)2011,JPO&INPIT |
