| 摘要 |
PROBLEM TO BE SOLVED: To provide such a technology that can make a via hole with high reproducibility even when a dual damascene process is conducted in the same chamber. SOLUTION: A via hole is formed in a first mask film on an interlayer insulation film and the interlayer insulation film so that it may reach the midway in the direction of thickness of the interlayer insulation film. A lower resist film is formed on the first mask film, and a second mask film having an opening corresponding to a wiring groove is formed thereon. Plasma of O<SB>2</SB>and CO is used in a chamber to etch the lower resist film, and the lower resist film is left on a part within the via hole. An opening that the planar shape of the opening of the lower resist film is imprinted is formed in the first mask film, and the lower resist film is removed and the via hole is dug more until a lower wiring is exposed. The interlayer insulation film is etched to the midway in the direction of the thickness so as to form a wiring groove. The wiring groove and the via hole are filled with a conductive member. COPYRIGHT: (C)2011,JPO&INPIT |
