ION-IMPLANTED GROUP-III NITRIDE SEMICONDUCTOR SUBSTRATE, BONDING SUBSTRATE FOR GROUP-III NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an ion-implanted group-III nitride semiconductor substrate with a small warpage; and to provide a bonding substrate for a group-III nitride semiconductor layer using the same, and a method for manufacturing a group-III nitride semiconductor device. SOLUTION: The ion-implanted group-III nitride semiconductor substrate 2 includes ion-implanted regions 20ia and 20ib on both main surfaces of 20a and 20b, respectively. The ion-implanted regions 20ia and 20ib are respectively formed with determined depths Da and Db from both main surfaces 20a and 20b. COPYRIGHT: (C)2011,JPO&INPIT