发明名称 EXPOSURE APPARATUS AND PHOTOMASK USED THEREIN
摘要 Disclosed is a photomask (3) which is provided with: a plurality of mask pattern rows (15) which are formed by arranging a plurality of mask patterns (13) at a predetermined pitch in the direction substantially orthogonally intersecting the transfer direction (A) of a subject to be exposed; and a plurality of microlenses (14), which are formed on the side of the subject to be exposed by respectively corresponding to the mask patterns (13) of the mask pattern rows (15), and reduce the mask patterns (13) and project the mask patterns on the subject to be exposed. Subsequent mask pattern rows (15b-15d) and the microlenses (14) corresponding to the subsequent mask pattern rows are formed by being shifted by a predetermined amount in the direction wherein the mask patterns (13) are arranged, such that exposure can be performed by supplementing portions between a plurality of exposure patterns formed by means of a mask pattern row (15a) positioned on the head side of the body to be exposed, said head side being in the transfer direction (A), with a plurality of exposure patterns formed by means of the subsequent mask pattern rows (15b-15d). Thus, fine exposure patterns are formed with high resolution and high density over the entire surface of the subject to be exposed.
申请公布号 WO2011058634(A1) 申请公布日期 2011.05.19
申请号 WO2009JP69288 申请日期 2009.11.12
申请人 V TECHNOLOGY CO., LTD.;MIZUMURA, MICHINOBU 发明人 MIZUMURA, MICHINOBU
分类号 G03F7/20;G03F1/00;G03F1/38 主分类号 G03F7/20
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