| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation apparatus and a formation method, capable of obtaining a low-temperature polysilicon film that does not undergo the fluctuation in crystal grain size and has a uniform crystal grain size. <P>SOLUTION: A mask 3 is so formed that a laser-beam-blocking area 31 and a laser-beam-transmissive area 32 are arranged in a reticular pattern so as not to be adjacent to each other. A predetermined channel-area-forming area 7 is irradiated with a laser beam by means of a microlens 5 through the mask 3. An a-Si:H film is irradiated with the laser beam that has been transmitted through the transmissive area 32 to cause the annealing of the irradiated part, thereby causing polycrystallization. Subsequently, the mask 3 is removed, and the entire surface of the predetermined channel-area-forming area 7 is irradiated with the laser beam. In an area in which the polycrystallization has occurred already, the melting point is raised and melting does not occur. In an area which is still amorphous is melted and solidified, thereby causing polycrystallization. In the polysilicon film thus obtained, the sizes of crystal grains are controlled in accordance with the light-blocking area 31 and the light-transmissive area 32 and fall within a specific range. <P>COPYRIGHT: (C)2011,JPO&INPIT |
