发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM
摘要 <p><P>PROBLEM TO BE SOLVED: To keep a gas flow to a substrate constant while controlling a current of a processing gas in a vacuum container by adjusting exhaust flow rates of a plurality of exhaust paths. <P>SOLUTION: The vacuum container 1 is evacuated through a first exhaust path 63a having a first valve 65a interposed and a second exhaust path 63b having a second valve 65b interposed, thereby the opening extent of the first valve 65a is adjusted so that the pressure in the vacuum container 1 reaches processing pressure P. The opening extent V of a butterfly valve 67 is set to a value described in a table 86 so that the exhaust flow rate of the first exhaust path 63a and the exhaust flow rate of the second exhaust path 63 have set values corresponding to a recipe, and the opening extent of the second valve 65b is adjusted so that a measured value of a differential pressure gauge 68 reaches differential pressureΔP described in the table 86. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011100786(A) 申请公布日期 2011.05.19
申请号 JP20090253321 申请日期 2009.11.04
申请人 TOKYO ELECTRON LTD 发明人 ORITO KOICHI;HONMA MANABU;TAMURA TATSUYA
分类号 H01L21/31;C23C16/52;H01L21/3065 主分类号 H01L21/31
代理机构 代理人
主权项
地址