发明名称 LARGE-AREA NANOENABLED MACROELECTRONIC SUBSTRATE, AND USE THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and apparatus for obtaining an electronic substrate including a plurality of semiconductor devices. <P>SOLUTION: A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed in the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-type doping nanowires and n-type doping nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for arranging nanowires on substrates, nanowire spraying techniques for forming nanowires as a film, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface levels in nanowires are described. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011101047(A) 申请公布日期 2011.05.19
申请号 JP20110015801 申请日期 2011.01.27
申请人 NANOSYS INC 发明人 DUAN XIANGFENG;NIU CHUNMING;EMPEDOCLES STEPHEN;ROMANO LINDA T;CHEN JIAN;SAHI VIJENDRA;BOCK LAWRENCE;STUMBO DAVID;PARCE J WALLACE;GOLDMAN JAY L
分类号 H01L29/06;B82B1/00;C01B31/02;H01L21/00;H01L21/331;H01L21/336;H01L21/77;H01L27/12;H01L29/737;H01L29/786;H01L29/861;H01L33/06;H01L33/20;H01L33/26;H01L35/34;H01L41/18;H01L41/193;H01L41/22;H01L41/24;H01L51/00;H01L51/05;H03H11/20 主分类号 H01L29/06
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