| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has the enhanced reliability of connection structure between a plurality of electrically conductive layers worked in a stepwise shape, and a plurality of contact holes having different depths and respectively reaching the conductive layers, and also to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device comprises: a base layer 45b formed on a second contact region 5 of a substrate 10 and forming a level difference between the second contact region 5 and a first contact region 4; a lower-layer-side laminate 91 which is formed on the substrate 10 covering the base layer 45b and whose upper step portion 81 laminated on the base layer 45b is worked in a stepwise shape; an upper-layer-side laminate 92 formed on a lower step portion 82 of the lower-layer-side laminate 91 laminated on the first contact region 4 and worked in a stepwise shape; an interlayer insulating layer 62 which covers the portions worked in a stepwise shape; and contact electrodes 51 piercing the interlayer insulating layer 62 and formed in the contact holes that respectively reach electrically conductive layers WL of the portions worked in a stepwise shape. <P>COPYRIGHT: (C)2011,JPO&INPIT |
