| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a spin-torque transfer magnetic read access memory (STT-MRAM) of which the selection device is improved. <P>SOLUTION: The spin-torque transfer magnetic read access memory (STT-MRAM) includes a magnetic bit to be coupled between a first conductor line and the selection device. The selection device includes at least two transistors. The selection device is operative to (a) select the magnetic bit for a spin-torque transfer (STT) write operation when the at least two transistors are in a first state, and (b) select the magnetic bit for a read operation when the at least two transistors are in a second state. The selection device may be implemented in silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
