发明名称 |
METHOD FOR FABRICATING AN ENLARGED OXIDE-NITRIDE-OXIDE STRUCTURE FOR NAND FLASH MEMORY SEMICONDUCTOR DEVICES |
摘要 |
A method of processing a flash memory device provides a semiconductor substrate including a surface region and forming a gate dielectric layer overlying the surface region. The method forms a floating gate layer having a thickness and including a first floating gate structure overlying a first portion of the gate dielectric layer and a second floating gate structure overlying a second portion of the gate dielectric layer. The method forms a trench region interposed between the first and second floating gate structures and extending through the entire thickness and through a portion of the surface region into a depth of the substrate. The method fills the entire depth of the trench region in the substrate and a portion of the trench region over the substrate using a dielectric fill material. The method forms an oxide on nitride on oxide (ONO) layer overlying the first and second floating gate structures and the dielectric material and a control gate overlying the ONO layer.
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申请公布号 |
US2011115012(A1) |
申请公布日期 |
2011.05.19 |
申请号 |
US20100917419 |
申请日期 |
2010.11.01 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
JIANG LI;PENG HONG XIU;KIM JONG WOO |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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