Maskenmaterial-Zusammensetzung, Verfahren zur Bildung einer Verunreinigungsdiffusionsschicht und Solarbatterie

摘要

A mask material composition that is used for diffusion barrier of an impurity diffusing component into a semiconductor substrate includes a siloxane resin (A1) containing a constituent unit represented by the following formula (a1): wherein R1 is a single bond or C1-C5 alkylene group; and R2 is a C6-C20 aryl group.