SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to reduce a voltage drop effect on a floating P+ region by using a diode with a smaller resistance than the resistance of the PMOS. CONSTITUTION: A second conductive well(110) is formed on the upper side of a first conductive substrate(100). A gate(172) is formed on the first conductive substrate. A first conductive well(130) is formed on the upper side of the second conductive well on one side of the gate. A first conducive ion implantation region(150) is formed on the upper side of the first conductive well on one side of the gate. A second conducive ion implantation region is formed on the upper side of the first conductive well.