| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element by using laser lift-off, by which a yield and a light emission output are improved. <P>SOLUTION: The method of manufacturing a semiconductor light-emitting element includes steps of: forming a semiconductor growth layer on the first main surface of a substrate for growth that is comprised of a first semiconductor layer, an active layer, and a second semiconductor layer; forming a plurality of junction electrodes away from each other on the second semiconductor layer and lattice-like guide grooves surrounding the respective junction electrodes in the second semiconductor layer; joining a supporting body with the semiconductor growth layer through the junction electrode; emitting laser to peel off the substrate for growth; dividing the semiconductor growth layer into every element area of the semiconductor light-emitting element; and cutting the supporting body and separating for every semiconductor light-emitting element. The removed area includes an area wherein the guide groove is formed, and the side wall of the second semiconductor layer formed by the guide groove has a chamfered shape at the intersection of the guide grooves. <P>COPYRIGHT: (C)2011,JPO&INPIT |
